| PART |
Description |
Maker |
| SI2304DDS SI2304DDS-T1-GE3 |
N-Channel 30-V (D-S) MOSFET
3300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
|
Vishay Siliconix
|
| DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| GP800NSM33 |
Hi-Reliability Single Switch IGBT Module Preliminary Information 800 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| DCR1008SF36 DCR1008SF DCR1008SF32 DCR1008SF33 DCR1 |
Phase Control Thyristor 1650 A, 3300 V, SCR
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| CTDS1608BLF-335 |
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR, SMD
|
CENTRAL TECHNOLOGIES
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| 16REV3300M18X16.5 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 3300 uF, SURFACE MOUNT
|
3M Company
|
| C947U332MYWDBA7317 |
Ceramic, Safety, C900_Y, 3300 pF, 20%, Y5U, Lead Spacing = 7.5mm
|
Kemet Corporation
|
| NRE-WY332M16V16X31.5F |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 3300 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
|
NIC Components, Corp.
|
| PDM-81M-3.8GSQ |
3300 MHz - 4300 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.7 dB INSERTION LOSS
|
MERRIMAC INDUSTRIES INC
|
| QR3310001 |
Fast Recovery Diode Module (100 Amp/3300 Volts) 快速恢复二极管模块00 Amp/3300伏特
|
Powerex, Inc.
|
|
